 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 (0.4) (1.5) (1.5) Unit: mm 6.90.1 2.50.1 (1.0) 2.00.2 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature * 1.00.1 (0.85) 2.40.2 0.450.05 VCBO VCEO VEBO IC ICP PC Tj Tstg -80 -80 -5 - 0.5 -1 1 150 -55 to +150 cm2 V V V A A W C C 3 (2.5) 2 (2.5) 1 1.250.05 Symbol Rating Unit 0.550.1 1 : Base 2 : Collector 3 : Emitter M-A1 Package Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = -10 A, IE = 0 IC = -100 A, IB = 0 IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA VCE = -5 V, IC = -500 mA IC = -300 mA, IB = -30 mA IC = -300 mA, IB = -30 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 120 11 20 130 50 100 - 0.4 -1.2 V V MHz pF Min -80 -80 -5 - 0.1 330 Typ Max Unit V V V A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 R 130 to 220 S 185 to 330 4.10.2 * High collector-emitter voltage (Base open) VCEO * Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier 3.50.1 Features (1.0) 4.50.1 R 0.9 R 0.7 Publication date: November 2002 SJC00029BED 1 2SA1762 PC Ta 1.2 IC VCE -1.2 Ta = 25C IB = -10 mA -9 mA -1.2 IC I B VCE = -10 V Ta = 25C Collector power dissipation PC (W) 1.0 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness -1.0 -1.0 Collector current IC (A) 0.8 - 0.8 0.6 - 0.6 -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA 0.4 - 0.4 0.2 - 0.2 0 0 20 40 60 80 100 120 140 160 0 Collector current IC (A) -8 mA -7 mA - 0.8 - 0.6 - 0.4 - 0.2 0 -2 -4 -6 -8 -10 0 0 -2 -4 -6 -8 -10 Ambient temperature Ta (C) Collector- emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -10 VBE(sat) IC -100 hFE IC 300 VCE = -10 V Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 -1 Ta = 75C 25C -25C -10 Forward current transfer ratio hFE 250 200 Ta = 75C 25C 25C -1 Ta = -25C 75C - 0.1 150 -25C 100 - 0.01 - 0.1 50 - 0.001 -1 -10 -100 -1 000 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT I E VCB = -10 V f = 200 MHz Ta = 25C Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 60 IE = 0 f = 1 MHz Ta = 25C ICBO Ta 104 VCB = -20 V 120 Transition frequency fT (MHz) 100 50 103 40 ICBO (Ta) ICBO (Ta = 25C) -10 -100 80 60 30 102 40 20 10 10 20 0 1 10 100 1 000 0 -1 1 0 60 120 180 Emitter current IE (mA) Collector-base voltage VCB (V) Ambient temperature Ta (C) 2 SJC00029BED 2SA1762 ICEO Ta 105 VCE = -10 V -10 Safe operation area Single pulse Ta = 25C ICP IC t = 10 ms 104 103 Collector current IC (A) -1 ICEO (Ta) ICEO (Ta = 25C) t=1s - 0.1 102 10 - 0.01 1 0 20 40 60 80 100 120 140 - 0.001 - 0.1 -1 -10 -100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) SJC00029BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
Price & Availability of 2SA1762
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |